| PART |
Description |
Maker |
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
| KAQV214S V214S |
HIGH VOLTAGE PHOTO MOS RELAY
High Voltage, Solid State Relay-MOSFET Output
|
Cosmo Electronics
ETC
COSMO[COSMO Electronics Corporation]
|
| IXTP01N100D IXTP01N100 |
High Voltage MOSFET 0.1 A, 1000 V, 110 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AD
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| STW9N150 W9N150V |
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH?/a> Power MOSFET
N-channel 1500V - 2.2ohm - 8A - TO-247 - Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage PowerMESH⑩ Power MOSFET
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| G2N7000 |
The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters solenoid and relay drivers.
N-CHANNEL ENHANCEMENT MODE MOSFET
|
E-Tech Electronics LTD
GTM CORPORATION
|
| 98822 |
High Voltage MOSFET
|
IXYS Corporation
|
| FS10SM-16 FS10SM-16A |
Power MOSFETs: FS Series, High Voltage, 800V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| 3VD235700YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD182600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD186700YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
