| PART |
Description |
Maker |
| CM200TU-12H |
HIGH POWER SWITCHING USE INSULATED TYPE
240 x 128 pixel format, CFL Backlight with power harness
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MCCD2004S |
350 mW High Voltage Switching Diode 240 Volts
|
Micro Commercial Components
|
| LT3437EFE LT3437IFE LT3437EFEPBF LT3437EDDTR |
High Voltage 500mA, 200kHz Step-Down Switching Regulator with 100μA Quiescent Current
High Voltage 500mA, 200kHz Step-Down Switching Regulator with 100µA Quiescent Current; Package: TSSOP; No of Pins: 16; Temperature Range: -40°C to 125°C 0.9 A SWITCHING REGULATOR, 240 kHz SWITCHING FREQ-MAX, PDSO16
High Voltage 500mA, 200kHz Step-Down Switching Regulator with 100µA Quiescent Current; Package: DFN; No of Pins: 10; Temperature Range: -40°C to 125°C 0.9 A SWITCHING REGULATOR, 240 kHz SWITCHING FREQ-MAX, PDSO10
|
Linear Technology, Corp.
|
| ISL6424EEBZ |
0.55 A DUAL SWITCHING CONTROLLER, 240 kHz SWITCHING FREQ-MAX, PDSO28
|
INTERSIL CORP
|
| MP6901 |
4 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching
High Power Switching Applications / Hammer Drive
|
TOSHIBA[Toshiba Semiconductor]
|
| APT5024BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 22A 0.240 Ohm
|
Advanced Power Technology Ltd.
|
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| PTFA192401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
| 2SD1313 E001105 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
