| PART |
Description |
Maker |
| APT2X101D100J APT2X100D100J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1000V 100A
|
ADPOW[Advanced Power Technology]
|
| APT2X101D60J APT2X100D60J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 100A
|
ADPOW[Advanced Power Technology]
|
| APT2X31D120J APT2X30D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 30A
CONNECTOR ACCESSORY 双超快软恢复整流二极
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| STE36N50 |
N Channel Enhancement Mode Power MOS Transistor in Isotop Package
|
ST Microelectronics
|
| STE150N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
|
STMicroelectronics
|
| 15KCD16A |
Transient suppressor CELLULAR DIE PACKAGE
|
Microsemi
|
| STE40NK90ZD |
N-CHANNEL 900V - 0.14 - 40 A ISOTOP Super FREDMeshTM MOSFET
N-CHANNEL 900V - 0.14 OHM - 40A ISOTOP SUPERFREDMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
