| PART |
Description |
Maker |
| WSF41632-22H2C WSF41632-22H2M WSF41632-22H2MA WSF4 |
128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
|
White Electronic Designs Co...
|
| WEDPS512K32-12BC WEDPS512K32-12BI WEDPS512K32-12BM |
512Kx32 SRAM MULTI-CHIP PACKAGE
|
WEDC[White Electronic Designs Corporation]
|
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| EDI8L32512V12AC EDI8L32512V17AC EDI8L32512V17AI ED |
512Kx32 SRAM Module.3.3V
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| CYM9262A CYM9261B 9260 |
256K x 72 SRAM Module
128K x 72 SRAM Module
From old datasheet system
|
Cypress
|
| ES29DS800FT-70TGI |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
Excel Semiconductor Inc.
|
| ES29F160FT-90RTG |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
Excel Semiconductor Inc.
|
| AS8S512K32AQ1-25L_Q AS8S512K32P-17L/IT AS8S512K32P |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 PGA-66
512K x 32 SRAM SRAM MEMORY ARRAY
|
Micross Components
Austin Semiconductor
|
| DS1220 DS1220AB DS1220AB-100-IND DS1220AB-120-IND |
16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24
16k Nonvolatile SRAM 16K的非易失SRAM
M39012 MIL RF CONNECTOR 16K的非易失SRAM
|
Maxim Integrated Products, Inc.
HIROSE ELECTRIC Co., Ltd.
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
|
