| PART |
Description |
Maker |
| APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IXGA15N100C |
1000V IGBT
Lightspeed Series IGBT(VCES000V，VCE(sat).5V的绝缘栅双极晶体
|
IXYS Corporation
|
| IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| C4520JB3D471M130KA-16 |
Commercial Grade ( High Voltage (1000V and over) )
|
TDK Electronics
|
| C4532C0G3F331K250KA-16 |
Commercial Grade ( High Voltage (1000V and over) )
|
TDK Electronics
|
| CGA7L1C0G3F390K160KA |
Automotive Grade ( High Voltage (1000V and over) )
|
TDK Electronics
|
| CGA7G1C0G3F220K110KA |
Automotive Grade ( High Voltage (1000V and over) )
|
TDK Electronics
|
| RF1S4N100SM |
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
|
New Jersey Semi-Conductor P...
|
| SUF5400 SUF5401 SUF5402 SUF5404 SUF5406 SUF5407 SU |
HIGH EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 3.0A
|
Gulf Semiconductor
|
| HER251 |
Plastic High-Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.5A
|
Rugao Dachang Electronics Co., Ltd
|
| IXSX35N120AU1 |
High Voltage IGBT with Diode(VCES200V，VCE(sat)4V的高电压绝缘栅双极晶体管(带二极管 70 A, 1200 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
