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IRGPH50KD2 - 1200V Copack IGBT in a TO-3P (TO-247AC) package From old datasheet system INSULATED GATE BIPOLAR TRANSISTOR

IRGPH50KD2_559026.PDF Datasheet


 Full text search : 1200V Copack IGBT in a TO-3P (TO-247AC) package From old datasheet system INSULATED GATE BIPOLAR TRANSISTOR
 Product Description search : 1200V Copack IGBT in a TO-3P (TO-247AC) package From old datasheet system INSULATED GATE BIPOLAR TRANSISTOR


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IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
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From old datasheet system
INFINEON[Infineon Technologies AG]
HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
IRGB6B60KD IRGS6B60KD IRGSL6B60KD 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
International Rectifier
HGT1S10N12 HGT1S10N120BNS HGTP10N120BN HGTG10N120B From old datasheet system
35A 1200V NPT Series N-Channel IGBT
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INTERSIL[Intersil Corporation]
Intersil, Corp.
HGT1S11N12 HGTG11N120CN HGT1S11N120CNS HGTP11N120C From old datasheet system
43A 1200V NPT Series N-Channel IGBT
43A/ 1200V/ NPT Series N-Channel IGBT
43A, 1200V, NPT Series N-Channel IGBT(43A, 1200V NPT系列N沟道绝缘栅双极型晶体 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
INTERSIL[Intersil Corporation]
Intersil, Corp.
IRG4PH40KD 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.47V @Vge=15V Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)
IRF[International Rectifier]
IRG4BC15UD-L IRG4BC15UD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) 绝缘栅双极型晶体管,超快软恢复二极管VCES和\u003d 600V电压的Vce(on)典\u003d 2.02V,@和VGE \u003d 15V的,集成电路\u003d 7.8A
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
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International Rectifier, Corp.
IRF[International Rectifier]
 
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