PART |
Description |
Maker |
TC58NS128ADC |
128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
|
TOSHIBA
|
EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
V437216C04VDTG-10PC V43716C04VDTG-10PC |
3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 REGISTER PLL ECC SDRAM MODULE 3.3V 16M x 72 high performance PC100 register PLL ECC SDRAM module
|
Mosel Vitelic Corp
|
EDD2516AKTA-6B-E EDD2516AKTA-7A-E EDD2516AKTA-7B-E |
256M bits DDR SDRAM (16M words x 16 bits)
|
Elpida Memory
|
TC58FVM7T2 TC58FVM7T2AFT65 |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY 128兆位,600 x 8 8米16位)的CMOS闪存
|
Toshiba Semiconductor Toshiba, Corp.
|
V436516S04VTG-10PC |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
V436516Z04VATG-10PC |
ER 10C 10#16 SKT RECP 3.316米x 64高性能PC100的无缓冲的SODIMM 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SODIMM
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
V54C365404VB |
High Performance PC100/125MHz 3.3 Volt 16M X 4 Synchronous DRAM(3.3V高性能PC100/125MHz 16Mx4同步动态RAM)
|
Mosel Vitelic, Corp.
|
GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
W9825G6DH-6C |
4M 4 BANKS 16 BITS SDRAM 16M X 16 DDR DRAM, 5.4 ns, PDSO54
|
Winbond Electronics, Corp.
|
IDT72T51333L5BB IDT72T51353L6BBI IDT72T51333 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|