| PART |
Description |
Maker |
| CY7C1012AV25 CY7C1012AV25-10BGC CY7C1012AV25-10BGI |
512K x 24 static RAM, 12ns
Memory : Async SRAMs
|
Cypress Semiconductor
|
| CY7C1049BV33-25ZC CY7C1049BV33L-12VC CY7C1049BV33L |
GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 5FT 512K X 8 STANDARD SRAM, 17 ns, PDSO44
512K x 8 Static RAM
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C128A-35PC CY7C128A-35VC CY7C128A-45SC CY7C128A |
2K x 8 Static RAM
Memory : Async SRAMs
|
Cypress Semiconductor
|
| EUA6027 EUA6027QIR1 |
128K x 8 ASYNC 5V
32K x 8, 5V, Async
|
德信科技股份有限公司
|
| CY7C197-12VC CY7C197-12PC CY7C197-25PC CY7C197-35P |
256Kx1 Static RAM 256K X 1 STANDARD SRAM, 45 ns, PDSO24
256Kx1 Static RAM 256K X 1 STANDARD SRAM, 15 ns, PDSO24
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
CYPRESS[Cypress Semiconductor]
|
| IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
From old datasheet system
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
|
IDT[Integrated Device Technology]
|
| GS88218AB-150I GS88218AD-250 GS88218AB-250 GS88218 |
9Mb Burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| IS67WVE4M16ALL IS66WVE4M16ALL |
1.8V Core Async/Page PSRAM
|
Integrated Silicon Solution, Inc
|
| MT45W8MW16BGX |
8MEG X 16 Async/Page/Burst CellularRAM Memory
|
Micron Technology
|
| GS842Z18AB-166 GS842Z18AB-166I GS842Z18AB-180 GS84 |
4Mb NBT SRAMs
4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
| CY7C1302DV25-167BZC CY7C1302DV25-167BZI CY7C1302DV |
9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture
9-Mbit Burst of Two Pipelined SRAMs with QDR垄芒 Architecture
9-Mbit Burst of Two Pipelined SRAMs with QDR⑩ Architecture
|
Cypress Semiconductor
|
| CY7C1020CV26-15ZSXE CY7C1020CV26-15ZSXET |
512Kb (32K x 16) Static RAM
Async SRAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 2.5 to 2.7 V;
|
CYPRESS SEMICONDUCTOR CORP
|
