| PART |
Description |
Maker |
| KDR367 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| U3FWJ44N |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| CRS01 |
Schottky Barrier Rectifier Schottky Barrier Type High Speed Rectifier Applications
|
TOSHIBA
|
| U1GWJ44 |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
|
TOSHIBA
|
| RKD703KK RKD703KKR |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| HSB226YP |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| RKD702KL RKD702KL-N |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| HSB0104YP |
Silicon Schottky Barrier Diode for High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| HSL226_07 HSL226 HSL226-N |
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
