PART |
Description |
Maker |
IS41LV85125B-60K IS41LV85125B-60KL IS41LV85125B |
512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 512K X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
MX27C8111 MX27C8111MC-10 MX27C8111MC-12 MX27C8111M |
8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE 512K X 16 OTPROM, 90 ns, PDIP42
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
24LC174 24LC174-_P 24LC174-_SN 24LC174-I_P 24LC174 |
16K 2.5V Cascadable I2C⑩ Serial EEPROM with OTP Security Page 16K 2.5V Cascadable I2C?/a> Serial EEPROM with OTP Security Page
|
Microchip Technology http://
|
24LC174 |
16K 2.5V Cascadable CMOS serial EEPROMs with OTP Security Page(16K2.5V层叠式IIC串行EEPROM)
|
Microchip Technology Inc.
|
UPD42S16400G5-60-7JD UPD42S16400G5-60-7KD UPD42S16 |
32K x 8 Magnetic Nonvolatile CMOS RAM 8K/16K x 18 Deep Sync FIFOs x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Maxim Integrated Products, Inc.
|
MX27C4111PC-90 27C4111-10 27C4111-12 27C4111-15 27 |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE
|
MCNIX[Macronix International]
|
V53C818H V53C818H35 V53C818H30 |
HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM 高性能EDO公司512k × 16页模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
CY27C128-120WMB CY27C128-150JC CY27C128-150WC CY27 |
128K (16K x 8-Bit) CMOS EPROM 128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 120 ns, PDIP28 128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 120 ns, PQCC32 128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 45 ns, PDIP28 128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 150 ns, PDIP28 128K (16K x 8-Bit) CMOS EPROM 16K X 8 UVPROM, 200 ns, CDIP28
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
93C86 93C86-EP 93C86-ESN 93C86-IP 93C86-ISN 93C86- |
8K/16K 5.0V Microwire Serial EEPROM 16K 5.0V Microwire Serial EEPROM(4.5~5.5V,16K10M次擦写周具上掉电数据保护电路,EEPROM) 8K/16K 5.0V Microwire Serial EEPROM 8K/16K 5.0V Microwire串行EEPROM Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:400V; Forward Current Avg Rectified, IF(AV):300A; Non Repetitive Forward Surge Current Max, Ifsm:6500A; Forward Voltage Max, VF:1.4V; Package/Case:DO-205 8K/16K 5.0V Microwire串行EEPROM
|
MICROCHIP[Microchip Technology] Microchip Technology Inc. Microchip Technology, Inc.
|
CYDM256A16 CYDM256A16-35BVXC CYDM256A16-55BVXC CYD |
1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL㈢ Dual-Port Static RAM
|
Cypress Semiconductor
|