PART |
Description |
Maker |
2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用(应用于电容器话筒沟道结型场效应管 From old datasheet system N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
|
2SK439 2SK439E K439 |
Silicon N Channel MOS FET Silicon N-Channel MOS FET 硅N沟道场效应晶体管 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK 2SK439
|
Hitachi,Ltd. Sanyo Semicon Device Hitachi Semiconductor
|
PHD22NQ20T-01 PHD22NQ20T |
N-channel TrenchMOS standard level FET N-channel TrenchMOS standard level FET 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-channel TrenchMOS?? standard level FET N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET MOS Field Effect Transistor N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
SSW1N50B SSI1N50B SSW1N50BTM SSI1N50BTU |
500V N-Channel B-FET / Substitute of SSI1N50A 500V N-Channel B-FET / Substitute of SSW1N50A 520V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|