| PART |
Description |
Maker |
| APT50GP60B2DF2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT32GU30B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT26GU30SA APT26GU30K |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT83GU30B APT83GU30S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technology
|
| APT75GP120B2 |
MOSFET
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| 2SK2941 2SK2941-ZJ-E2 2SK2941-ZJ-E1 2SK2941-ZJ-E1J |
Low voltage 4V drive power MOSFET
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
