| PART |
Description |
Maker |
| 10EDB20 |
DIODE - 1A 200V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| 10DDA20 |
DIODE - 1A 200V TJ = 150C 1 A, 200 V, SILICON, SIGNAL DIODE
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| IRGP20B120UD-EP |
insulated gate bipolar transistor with ultrafast soft recovery didoe
|
International Rectifier
|
| SUD45P03-15A |
P-Channel 30-V (D-S) / 150C MOSFET
|
Vishay Siliconix
|
| ACDSW21-G |
Small Signal Switching Diodes, V-RRM=200V, V-R=200V, P-D=250mW, I-F=200mA
|
Comchip Technology
|
| FMX-32S FMN-G12S FMP-G12S |
200V,Ultra-Fast-Recovery Rectifier Diodes(200V，超快恢复整流二极管)
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| T498D106K050ATE1K0 |
Tantalum Surface Mount Capacitors ?High Temperature T498 150C Rated MnO2 Series
|
Kemet Corporation
|
| IRFS640 IRFS640B IRF640B IRF640 IRF640BTSTUFP001 I |
200V N-Channel B-FET / Substitute of IRF640 & IRF640A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
