PART |
Description |
Maker |
MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16 FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16 LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting Asynchronous 2M(128Kx16) bits Static RAM
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Brilliance Semiconducto... Honeywell International, Inc. BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
LY621024 |
128K X 8-Bit Low Power CMOS SRAM
|
Lyontek
|
LY62W12816ML-70LLSIT LY62W12816GL-70LLSI LY62W1281 |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
AS6C1008 |
128K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
LY62L12816 LY62L12816E LY62L12816GL LY62L12816GV L |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
BS616LV2016DIP55 BS616LV2016ECG55 BS616LV2016ECG70 |
Very Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconductor Brilliance Semiconducto...
|
BS616LV2019AI55 BS616LV2019TI70 BS616LV2019DIP55 B |
Very Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto... Brilliance Semiconductor
|
K6F2016V4E K6F2016V4E-EF55 K6F2016V4E-EF70 K6F2016 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K6F2016U4D K6F2016U4D-F K6F2016U4D-FF55 K6F2016U4D |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
HY628100BLLG HY628100BLT1-I HY628100B HY628100B-E |
128K x8 bit 5.0V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM 85ns; Ultra low power 128K x 16 CMOS SRAM 55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
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