| PART |
Description |
Maker |
| GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
Panasonic Semiconductor
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| GN2011 |
GaAs N-Channel MES IC
|
Panasonic
|
| 3SK166 3SK166A 3SK166A-0 3SK166A-2 |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET 砷化镓N沟道双栅场效应晶体管
|
Sony Corporation
Sony, Corp.
|
| SGM2014 SGM2014AM |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| 3SK165A |
GaAs N-channel Dual Gate MES FET
From old datasheet system
|
Sony
|
| SGM2016AN |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
Sony
|
| SGM2014M SGM2014 |
From old datasheet system
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| NE650R479A NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET 0.4册，S波段功率GaAs场效应晶体管
0.4 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NES1823P-50 |
50 W L-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
