| PART |
Description |
Maker |
| 2SK3101 2SK3101LS |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| VEC2402 |
Medium Output MOSFETs
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH3322 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH3321 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SJ650 ENN7500 |
High Output MOSFETs
DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| KTD2061 |
General Purpose Transistor
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE TV/ MONITOR VERTICAL OUTPUT/ DRIVER STAGE/ COLOR TV CLASS B SOUND OUTPUT)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
| AD801702 AD8017ARZ-REEL |
Low Cost, High Output Current, High Output Voltage Line Driver
Dual High Output Current, High Speed Amplifier
|
Analog Devices
|
| BA26-601A BB26-601A BA31-910 BB31-910 BA20-601A BA |
CY2304NZ Four Output PCI-X and General Purpose Buffer
5V, 3.3V, ISR™ High-Performance CPLDs
|
Air Cost Control
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
