PART |
Description |
Maker |
S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PBGA64 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 4M X 16 FLASH 3V PROM, 90 ns, PBGA48
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Spansion, Inc. SPANSION LLC
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DP5Z1MM16PI3-12C DP5Z1MM16PJ3-12B DP5Z1MW16PA3-12B |
1M X 16 FLASH 5V PROM, 120 ns, CQIP48 HERMETIC SEALED, STRAIGHT, SLCC-48 1M X 16 FLASH 5V PROM, 120 ns, CQCC48 1M X 16 FLASH 5V PROM, 120 ns, CPGA50 1M X 16 FLASH 5V PROM, 150 ns, CQCC48
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MN12261 MN12C25D MN12C201D |
128 X 16 MASK PROM, 6 ns, PDIP16 0.300 INCH, PLASTIC, DIP-16 38 X 16 MASK PROM, 2 ns, PSIP9 64 X 16 MASK PROM, 2 ns, PDIP16
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Panasonic, Corp. PANASONIC CORP
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NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES 64M X 8 FLASH 3V PROM, 12000 ns, PDSO48 128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
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STMicroelectronics NUMONYX
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PY291A PY291A-25DMB PY291A-25WMB PY291A-25WC PY291 |
2K X 8 REPROGRAMMABLE PROM 2K X 8 OTPROM, 25 ns, PDIP24 2K X 8 REPROGRAMMABLE PROM 2K × 8可重复编程胎膜早 2K X 8 REPROGRAMMABLE PROM 2K X 8 OTPROM, 35 ns, PDIP24 2K X 8 REPROGRAMMABLE PROM 2K X 8 UVPROM, 35 ns, CDIP24
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Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
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AM29DL16XC AM29DL164CB80WCI AM29DL164CB120WCE AM29 |
Am29DL16xC - 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only. Simultaneous Operation Flash Memory Am29DL16xC - 16兆位米8 1个M x 16位).0伏的CMOS只。同时作业闪 2M X 8 FLASH 3V PROM, 80 ns, PBGA48 2M X 8 FLASH 3V PROM, 120 ns, PBGA48 2M X 8 FLASH 3V PROM, 90 ns, PBGA48
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AMIC Technology, Corp. ADVANCED MICRO DEVICES INC
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MX28F1000PRC-90-C4 MX28F1000PQC-90-C4 MX28F1000PTC |
128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, REVERSE, TSOP1-32 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 PLASTIC, LCC-32 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, TSOP1-32 128K X 8 FLASH 12V PROM, 90 ns, PDIP32 0.600 INCH, PLASTIC, DIP-32 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
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Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
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SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash 7.6 mm(0.3 inch) Micro Bright Seven Segment Displays CONNECTOR ACCESSORY LED Light Bars D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2 |
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
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Silicon Storage Technol... SILICON STORAGE TECHNOLOGY INC
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