| PART |
Description |
Maker |
| PPFL3803M |
N Channel MOSFET; Package: TO-254; ID (A): 35; RDS(on) (Ohms): 0.0095; PD (W): 150; BVDSS (V): 30; Rq: 0.83; 35 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| IRFY240M IRFY240 |
200V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package
POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
| IRFY9240 IRFY9240M |
-200V Single P-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package
POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
| SDR954MDBS SDR953Z SDR953ZUBTX SDR953ZDB SDR953ZUB |
50 A, 400 V, SILICON, RECTIFIER DIODE, TO-254AA
Hyper Fast Rectifier
50 A, 300 V, SILICON, RECTIFIER DIODE, TO-254
50 A, 500 V, SILICON, RECTIFIER DIODE, TO-254
50 A, 600 V, SILICON, RECTIFIER DIODE, TO-254
|
SOLID STATE DEVICES INC
Solid States Devices, Inc
Solid States Devices, I...
|
| IRFY9130C IRFY9130CM |
POWER MOSFET THRU-HOLE (TO-257AA)100V, P-CHANNEL HEXFET? MOSFET TECHNOLOGY
|
International Rectifier
|
| JANSF2N7470T1 JANSH2N7470T1 IRHMS57064 JANSG2N7470 |
45 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
|
IRF[International Rectifier]
|
| IRFY430C |
POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
| IRFY340C |
POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
| IRFY9240C |
POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
| IRFY9140M IRFY9140 |
POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
| IRHM57264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
| IRFM054 |
60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET THRU-HOLE (TO-254AA)
|
IRF[International Rectifier]
|
