| PART |
Description |
Maker |
| UPD444016LG5-A10-7JF UPD444016LG5-A12-7JF UPD44401 |
256K X 16 STANDARD SRAM, 8 ns, PDSO44
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT 4分位CMOS快速静态存储器256K字由16
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| UPD434008AL |
4M-Bit CMOS Fast SRAM
|
NEC Electronics
|
| PDM44018 |
64K x 18-Bit Fast CMOS SRAM
|
Paradigm Technology
|
| PDM44026 |
32K x 36-Bit Fast CMOS SRAM
|
Paradigm Technology
|
| AS7C31026 AS7C31026-10 AS7C31026-10BC AS7C31026-10 |
5V/3.3V 64K16 CMOS SRAM
8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85
CONN SOCKET IC 16-PIN SMD
8-Bit Parallel-Load Shift Registers 16-TSSOP -40 to 85
CONN SOCKET IC 18-PIN SMD
8-Bit Parallel-Load Shift Registers 16-SO -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PBGA48
5V/3.3V 64Kx6 CMOS SRAM 5V/3.3V 64Kx6 CMOS SRAM
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PBGA48
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| UPD444008L UPD444008LLE-A10 UPD444008LLE-A12 UPD44 |
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT 4分位CMOS快速静态存储器12k - Word8
512K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
512K X 8 STANDARD SRAM, 12 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
|
NEC, Corp.
Unisonic Technologies Co., Ltd.
NEC Corp.
|
| IDT71V256SA12PZG8 IDT71V256SA12PZGI8 IDT71V256SA12 |
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
3.3V, 32K X 8 Static RAM
|
Integrated Device Technology
IDT
|
