| PART |
Description |
Maker |
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD
2.5V In-System Programmable SuperFAST?/a> High Density PLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| OL395N-80 OL395N-P20 OL395N-100 OL395N-20 OL395N-4 |
1.3 ?? High-Power Laser-Diode Coaxial Module
FIBER OPTIC TRANSMITTER 光纤变送器
1.3 m High-Power Laser-Diode Coaxial Module
1.3 レm High-Power Laser-Diode Coaxial Module
1.3 μm High-Power Laser-Diode Coaxial Module
|
OKI electronic components
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| STH51004X STH51005X Q62702-P3083 STH51004 STH51005 |
1300 nm Laser, High Power
From old datasheet system
1300 nm Laser in Coaxial Package with SM-Pigtail High Power
1300 nm Laser in Coaxial Package with SM-Pigtail,High Power
1300 nm Laser in Coaxial Package with SM-Pigtail, High Power 1300 nm激光的同轴封装与钐尾纤，大功率
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| OL595N-P20 OL595N-20 OL595N-40 OL595N-60 OL595N_20 |
1.55 μm High-Power Laser-Diode Coaxial Module
1.55 レm High-Power Laser-Diode Coaxial Module
From old datasheet system
1.55 m High-Power Laser-Diode Coaxial Module
1.55 ?? High-Power Laser-Diode Coaxial Module
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MA2830 |
IND, HIGH-POWER DENSITY, HIGH EFFICIENCY, SHIELDED
Power Switching Regulators
|
Shindengen Electric Manufacturing Company, Ltd.
Shindengen Electric Mfg.Co.Ltd
|
| SET111411 SET111403 SET111412 SET111419 SET111404 |
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度，大电3 -相全波桥式整流器（反向电000V的温5℃时平均整流电流45A条，高密度，大电流，三相全波桥整流器
HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
|
Semtech, Corp.
Semtech Corporation
|
| 306DCR2R3STV |
High Capacitance ?Very fast charge/discharge ?High power density
|
Illinois Capacitor, Inc...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| DL-6140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
| 5962-9233803MRX 5962-9233803MSX 5962-9233803MXX 59 |
Multirate Laser Driver with Extinction Ratio Control
155Mbps to 2.7Gbps SFF/SFP Laser Driver with Extinction Ratio Control
Low-Power, 622Mbps Limiting Amplifiers with Chatter-Free Power Detect for LANs
622Mbps LAN/WAN Laser Driver with Automatic Power Control and Safety Shutdown
2.7Gbps, Low-Power SFP Laser Drivers
保险丝，可编程的PLD
|
限幅放大
|
