| PART |
Description |
Maker |
| KMM53632004CK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
| KMM53216000CK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| AEPDH1M8LB-12 AEPDS1M8LB-85P AEPDH1M8LB-10P AEPDH1 |
1M X 8 MULTI DEVICE DRAM MODULE, 120 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 85 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
| KMM5321204C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| KMM5368005BSW |
8M x 36 DRAM SIMM(8M x 36 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
| KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004 |
4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324100CKG KMM5324000CKG KMM5324100CK KMM532400 |
4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53216004CK KMM53216004CKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5321200C2W KMM5321200C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| KMM53616000BKG KMM53616000BK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| STI91000-80TOH STI91000-60GOI STI91000-70GPS STI91 |
1M X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30 SIMM-30
1M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30 SIMM-30
1M X 9 FAST PAGE DRAM MODULE, 70 ns, SMA30 SIMM-30
|
KODENSHI, CORP.
3M Company
|
