| PART |
Description |
Maker |
| 2N6796LCC4 |
N-Channel Power MOSFET（Vdss00VId(cont).4A，Rds(on).18ΩN沟道功率型MOS场效应管（Vdss00VId(cont).4A，Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
| BB-103 |
Baseboard for TMCM-103
|
TRINAMIC Motion Control GmbH & Co. KG.
|
| STB97300VEA STB97300-14 |
PC/104 Form Factor STX Baseboard with Multiple I/O Features
|
Axiomtek Co., Ltd.
|
| PCE-5124 PCE-5124F-00A1E PCE-5124G2-00A1E PCE-5124 |
LGA775 Core?/a> 2 Quad CPU Card with PCI Express / IPMI / VGA/ Dual GbE LAN / 6 COM Ports
|
Advantech Co., Ltd.
|
| UNIRS232USB |
The Universal RFID Socket board is the baseboard for the MicroRWD RFID reader modules from IB Technology.
|
rfsolutions.ltd
|
| BB-100 |
Baseboard for 1x TMCM-100 1x TMCM-035
|
TRINAMIC Motion Control GmbH & Co. KG.
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| B1821BH075C300N B1821BH075C275N B1821BH038C275N B1 |
Cap Screws Cont
|
Fastenal
|
| AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
