| PART |
Description |
Maker |
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HWL26NPA |
L-Band GaAs POWER FET
|
Hexawave, Inc
|
| FLK057WG |
X, Ku Band Power GaAs FET
|
Eudyna Devices Inc
|
| NE6510179 NE6510179A NE6510179A-T1 |
1 W L-BAND POWER GaAs HJ-FET
|
NEC[NEC]
|
| FLC257MH-8 |
C-Band Power GaAs FET
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| HWL23NPB |
L-Band GaAS Power FET
|
Hexawave, Inc
|
| HWL30YRA HWL30YRA-V1-15 |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWL34YRA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWL32NPA HWL32NPA-V1-15 |
L-Band GaAs Power FET
|
Hexawave, Inc
|
