| PART |
Description |
Maker |
| 3SK186 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| BF901R BF901 |
Silicon n-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
ETC
|
| 3SK319YB-TL-E 3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
| 3SK318 3SK318YB-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
| 3SK317 3SK317ZR-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Renesas Electronics Corporation
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| KK4012B KK4012BD KK4012BN |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| IN74HC20A IN74HC20AD IN74HC20AN |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
IK Semicon Co., Ltd
|
| KK74AC20D KK74AC20N |
Dual 4-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK74ACT21 KK74ACT21D KK74ACT21N |
Dual 4-Input AND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
