| PART |
Description |
Maker |
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| UMIL60 |
60 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz
UHF 225-400 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 8; Gain (dB): 0; Vcc (V): 28; Cob (pF): 70; fO (MHz): 0; Case Style: 55HW-2 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Vishay Semiconductors
|
| DB-55035S-175 DB-57060S-526 SD1274-01 DB-55015-165 |
HF to 2000 MHz Class AB Common Source - PowerSO-10RF
|
ETC
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
http://
|
| MS1227 |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; Case Style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi, Corp.
ADPOW
|
| 10A030 |
3 W, 20 V, 1000 MHz common emitter transistor
3 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHz Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| 23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor
2.5 Watts, 20 Volts, Class A Linear to 2300 MHz
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.2A I(C) | FO-41BVAR
|
GHZTECH[GHz Technology]
|
| 1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor
32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| A82015C0GL5 A82120C0GL5 A68015C0GL5 A56015C0GL5 A5 |
Axial Leaded Multilayer Ceramic Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 200 VDC, 500 VDC
|
Vishay Siliconix
|
| XD010-51S-D4F XD010-51S-D4FY XD010-51S-D4F1 |
902 MHz - 928 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
902-928 MHz Class A/AB 15W Power Amplifier Module
|
RF MICRO DEVICES INC
http://
SIRENZA MICRODEVICES
|
