| PART |
Description |
Maker |
| ZX5T955G |
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR
|
Diodes Incorporated
|
| ZXTP2014GTC ZXTP2014G ZXTP2014GTA |
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2SB817 2SD1047 |
NPN Triple Diffused Planar Silicon Transistor for 140V/12A AF 60W Output Applications(用于140V/12AAF 60W输出应用的NPN三路硅平面扩散型晶体
NPN Triple Diffused Planar Silicon Transistors 140V/12A AF 60W Output Applications
PNP Epitaxial Planar Silicon Transistors 140V/12A AF 60W Output Applications
|
Sanyo Electric Co.,Ltd.
|
| MTP29N15E |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
|
| ECG48 ECG52 ECG36 ECG36MP ECG37MCP ECG50 ECG47 ECG |
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-3VAR
TRANSISTOR | BJT | PAIR | NPN | 140V V(BR)CEO | 12A I(C) | TO-3VAR
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 140V V(BR)CEO | 12A I(C) | TO-3VAR 晶体管|晶体管|一对|互补| 140伏特五（巴西）总裁| 12A条一（c）|VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|02
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 8A I(C) | TO-220AB
|
Electronic Theatre Controls, Inc.
Xilinx, Inc.
|
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| MJH1101706 MJH11022G MJH11017 MJH11018 MJH11018G M |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS
|
ONSEMI[ON Semiconductor]
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| MTW26N15E ON2689 |
TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM 26 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| ZXTP25140BFHQ ZXTP25140BFHQTA |
140V PNP MEDIUM POWER TRANSISTOR
|
Diodes Incorporated
|
| 2SK4132SK414 |
TRANSISTOR,MOSFET,N-CHANNEL,140V V(BR)DSS,8A I(D),TO-247VAR
|
Renesas
|
| 2SB817C-1E ENA0188B |
Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L
|
ON Semiconductor
|
