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74LVT CA3169 364084 DIN8140 K2150 01109 7N60B CEA3055
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K4S641632E-TC1H - 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 64Mbit SDRAM

K4S641632E-TC1H_422026.PDF Datasheet

 
Part No. K4S641632E-TC1H K4S641632E-TC1L K4S641632E-TC50 K4S641632E-TC55 K4S641632E-TC70 K4S641632E-TL1H K4S641632E-TL1L K4S641632E-TL50 K4S641632E-TL55 K4S641632E-TL60 K4S641632E-TL70 K4S641632E-TL75 K4S641632E-TC75 K4S641632E K4S641632E-TC60
Description 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
64Mbit SDRAM

File Size 127.89K  /  10 Page  

Maker


SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: K4S641632E-TC75
Maker: SAMSUNG
Pack: TSOP
Stock: Reserved
Unit price for :
    50: $2.33
  100: $2.22
1000: $2.10

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Homepage http://www.samsung.com/Products/Semiconductor/
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 Full text search : 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 64Mbit SDRAM
 Product Description search : 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 64Mbit SDRAM


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K4S641632E-TC1H voltage vgs K4S641632E-TC1H Diode K4S641632E-TC1H noise K4S641632E-TC1H level K4S641632E-TC1H capacitors
 

 

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