| PART |
Description |
Maker |
| ZXMC6A09DN8TA ZXMC6A09DN8TC |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| ZXMHC6A07N8 ZXMHC6A07N8TC |
60V SO8 Complementary enhancement mode MOSFET H-Bridge
|
Diodes Incorporated
|
| KDS4559 |
60V Complementary PowerTrench MOSFET
|
Guangdong Kexin Industrial Co.,Ltd
|
| KDS8333C |
60V Complementary PowerTrench MOSFET
|
Guangdong Kexin Industrial Co.,Ltd
|
| BFT70 BFX80 BFX36 BFX11 BFX79 BFX81 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-18
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-78
晶体管|晶体管|一对|互补| 60V的五（巴西）总裁| 600毫安一（c）|7
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 20V V(BR)CEO | 200MA I(C) | TO-77 晶体管|晶体管|一对|互补| 20V的五（巴西）总裁| 200mA的一（c）|7
|
TT electronics Semelab, Ltd.
|
| VEC2616 VEC2616-TL-H |
Power MOSFET 60V, 3A, 80mΩ, ?0V, ?.5A, 137m, Complementary Dual VEC8
|
ON Semiconductor
|
| ZXMS6005DG ZXMS6005DGTA |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET?/a> MOSFET
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET垄芒 MOSFET
|
Diodes Incorporated
|
| CFC2026Y |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CFA1046Y
|
Continental Device India Limited
|
| CMLDM3757-15 |
ENHANCEMENT-MODE COMPLEMENTARY MOSFET
|
Central Semiconductor C...
|
| DMG6601LVT-7 |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
|
Diodes
|
| PHC21025 |
Complementary enhancement mode MOS transistors
|
http://
PHILIPS[Philips Semiconductors]
|
