| PART |
Description |
Maker |
| MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MMDF6N03HD MMDF6N03HD_D ON2199 ON2198 |
DUAL TMOS POWER MOSFET 30 VOLTS
Medium Power Surface Mount Products
From old datasheet system
|
Motorola, Inc
ON Semi
|
| MTDF1P02HD |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
|
Motorola, Inc.
|
| MTDF1N02HD ON2522 ON2521 |
DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM
From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
| MTDF1P02HD ON2526 ON2525 |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
From old datasheet system
|
Motorola, Inc
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| ISL6610CRZ ISL6610CBZ ISL6610 ISL6610A ISL6610ACBZ |
Dual Synchronous Rectified MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 16-QFN T&R 4 A BUF OR INV BASED MOSFET DRIVER, PQCC16
|
Intersil, Corp.
Intersil Corporation
|
| MMDF2N06V |
DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MMFT3055E |
MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
