PART |
Description |
Maker |
TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY 16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
TC58256FTI |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
TC58FVB321 TC58FVXB-70 TC58FVXB-10 TC58FVT321-70 |
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32兆位分 200万6位)的CMOS闪存 CAT5E PATCH CORD 100MHZ 7 FOOT BLACK 32兆位分 200万6位)的CMOS闪存 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
EDX5116ABSE-3B-E EDX5116ABSE-3A-E EDX5116ABSE-3C-E |
512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
|
Elpida Memory, Inc. DRAM
|
TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位)的CMOS NAND型E2PROM (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor Toshiba, Corp.
|
SLA24C01-D-3/P SLA24C02-D-3/P SLA24C02-S-3/P SLA24 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
|
SIEMENS A G SIEMENS AG Siemens Semiconductor Group
|
IS42S32800B-6B IS42S32800B-6BLI IS42S32800B-6T IS4 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
BL93C56 |
2K bits (256 X 8 or 128 X 16)/ 4K bits (512 X 8 or 256 X 16) Three-wire Serial EEPROM
|
SHANGHAI BELLING CO., LTD.
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
|
EDD2508AKTA-5B-E EDD2508AKTA-5C-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
Elpida Memory, Inc.
|
EDD2508AKTA-5C EDD2508AKTA-5 EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits DDR400)
|
Elpida Memory
|