PART |
Description |
Maker |
IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM x8 SDRAM x8 SDRAM内存 x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc. Hanbit Electronics Co., Ltd.
|
HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512M; 100MHz LVTTL interface SDRAM 512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
HB52R1289E22 HB52R1289E22-A6B HB52R1289E22-B6B |
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M ??4 Components) PC100 SDRAM 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 4 Components) PC100 SDRAM 1 GB的注册SDRAM的内 GB的注册SDRAM的内存(364 M组件)PC100的SDRAM内存 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M × 4 Components) PC100 SDRAM
|
ELPIDA MEMORY INC Elpida Memory, Inc.
|
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYS72D64020GU HYS64D64020GU |
2.5 V 186-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184脚、寄存型512MDDR-I SDRAM 模块)
|
SIEMENS AG
|
MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM 128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
HYB18TC256160AF-3.7 HYB18TC256160AF-5 HYB18TC25616 |
256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM
|
Qimonda AG
|
K4S161622H |
16Mb H-die SDRAM Specification IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM 184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA ETC Electronic Theatre Controls, Inc.
|