| PART |
Description |
Maker |
| KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power
8K x 8 bit Low Power CMOS Static RAM
8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDTQS3L384SO IDTQS3L384Q QS3L384Q IDTQS3L384QG IDT |
QuikSwitch High-Speed Low Power CMOS 10-Bit Bus Switch
QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS EXCHANGE SWITCH 3L SERIES, 10-BIT DRIVER, TRUE OUTPUT, PDSO24
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| P87C51SBBB P87C51UFBB |
80C51 8-bit microcontroller family 4K/128 OTP/ROM/ROMless low voltage 2.7V.5.5V low power high speed 33 MHz
CMOS single-chip 8-bit microcontrollers
|
Philips
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| IDT6116 IDT6116LA IDT6116LA120D IDT6116LA120DB IDT |
Enhanced JFET Precision Operational Amplifier 8-PDIP 0 to 70 的CMOS静态RAM 16K的（2K × 8位）
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 20 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 35 ns, PDIP24
TRANS NPN 80VCEO 1A MT-3 的CMOS静态RAM 16K的（2K × 8位）
Dual Enhanced JFET Precision Operational Amplifier 8-SOIC -40 to 85 的CMOS静态RAM 16K的（2K × 8位）
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 120 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, CDIP24
TRANS NPN LF 50VCEO .1A SS-MINI 的CMOS静态RAM 16K的（2K × 8位）
20 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 的CMOS静态RAM 16K的（2K × 8位）
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, CDIP24
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-SOIC 0 to 70 的CMOS静态RAM 16K的（2K × 8位）
CMOS STATIC RAM 16K (2K x 8 BIT) 的CMOS静态RAM 16K的（2K × 8位）
Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-PDIP 0 to 70
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70
Enhanced-JFET Precision Operational Amplifier 8-SOIC 0 to 70
Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
CABLE SMA-RA/SMA-RA 36 RG-58
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP 0 to 70
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SO 0 to 70
CABLE SMA/BNC 12 RG-142
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SOIC -40 to 85
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP 0 to 70
Enhanced JFET Precision Operational Amplifier 8-SOIC 0 to 70
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC 0 to 70
|
INTEGRATED DEVICE TECHNOLOGY INC
AME, Inc.
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| FMP1617CCX-GXXX FMP1617CCX-HXXX FMP1617CCX-G85E FM |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FMP3217BA7-FXXX FMP3217BA7-GXXX FMP3217BA7-H60E FM |
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FMP1216ACX |
8M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
