PART |
Description |
Maker |
MB111XXX |
Bipolar Gate Array
|
Fujitsu
|
TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array 300 usable gate, 1.5 micron, CMOS gate array 700 usable gate, 1.5 micron, CMOS gate array 4 K usable gate, 1.0 micron, CMOS gate array 500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
UPD65321 UPD65322 UPD65323 UPD65941GB-XXX-YEU UPD6 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) Channelless type CMOS gate array using 0.35um process
|
NEC
|
HER207 HER207-T3 HER207-TB HER206 HER206-T3 HER206 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 13000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 2.0A HIGH EFFICIENCY RECTIFIER 2.0安培高速整流二极管
|
WTE[Won-Top Electronics] Won-Top Electronics Co., Ltd.
|
LZ9GF16 |
1600 Gates Gate Array LZ 9 G Series 1 6 0 0 Gates Gate Array
|
Sharp Electrionic Components
|
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
IRGB4064DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
IRGI4061DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|