| PART |
Description |
Maker |
| HY514264B |
256K x 16 Extended Data Out Mode
|
Hynix Semiconductor
|
| GLT44016 GLT44016-25J4 GLT44016-25TC GLT44016-28J4 |
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
ETC
|
| K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K3N3C6000D-DC K3N3C6000D-DC10 |
256K X 16 MASK PROM, 100 ns, PDIP40
4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet
|
Samsung Electronic
|
| MB81N643289 MB81N643289-50 MB81N643289-60 |
8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM
MEMORY 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAM
|
Fujitsu Microelectronics
|
| NT511740D5J-60 NT511740D5J-6L NT511740D5J-5L NT511 |
CMOS with Extended Data Out 的CMOS扩展数据输出
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| K4E641612B-TC K4E661612B-TC K4E641612B-L K4E661612 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM416C12CJ-L5 KM416V12CJ-L5 KM416V10CJ-L5 KM416C10 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out 100万16的CMOS动态随机存储器的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM416V1004A-L8 KM416V1004A-L6 KM416V1004A-F7 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT 100万16位CMOS动态RAM的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
http://
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