| PART |
Description |
Maker |
| LMP2003 |
VHF Silicon MOSFET Power Amplifier Module(5.5W ,7.2V,220MHz-222MHz)(VHF MOSFET功率放大器模输出功率:5.5W,电压:7.2V,220MHz-222MHz))
|
Semelab(Magnatec)
|
| TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| S-AV32A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL VHF RADIO APPLICATIONS 射频功率放大器模块调频射频功率放大器模块60钨商业甚高频无线电应
|
Toshiba, Corp.
Toshiba Semiconductor
|
| S-AV40 |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| S-AV37A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 32-W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| 2SK3075 EE08687 |
From old datasheet system
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| 2SC2638 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
http://
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2639 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
