PART |
Description |
Maker |
KMM5362000B2 KMM5362000B2G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
GS-F8MB-SIMM 4962 |
8MByte SIMM Flash Memory Module(8M字节SIMM闪速存储器模块) 8MByte上海药物研究所闪存模块(上海药物研究所800万字节闪速存储器模块 8M X 8 FLASH 5V PROM MODULE, 70 ns, SMA80 SIMM-80 From old datasheet system 8 MByte SIMM FLASH MEMORY MODULE
|
Numonyx Asia Pacific Pte, Ltd. STMicroelectronics N.V. ST Microelectronics 意法半导
|
KMM594000-10 KMM594000-8 KMM594000 |
4M x 9 CMOS DRAM Memory Module 4米9的CMOS DRAM记忆体模 4M x 9 CMOS DRAM SIMM Memory Module
|
Samsung Semiconductor Co., Ltd. Samsung Electronics
|
AEPDH1M8LB-12 AEPDS1M8LB-85P AEPDH1M8LB-10P AEPDH1 |
1M X 8 MULTI DEVICE DRAM MODULE, 120 ns, SMA28 SIMM-28 1M X 8 MULTI DEVICE DRAM MODULE, 85 ns, SMA28 SIMM-28 1M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
KMM5324100CKG KMM5324000CKG KMM5324100CK KMM532400 |
4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM53232004CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5324004CSWG KMM5324004CSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5328000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
KMM53632000BK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|