| PART |
Description |
Maker |
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| ALD1108E ALD1108EDC ALD1108EPC ALD1108ESC ALD1110E |
QUAD/DUAL EPADPRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD⑩)
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD)
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD?
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD 双电可编程模拟器件（EPAD⑩）
|
ALD[Advanced Linear Devices]
Advanced Linear Devices, Inc.
|
| PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN- |
20ns programmable electrically erasable logic array
15ns programmable electrically erasable logic array
Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列
|
ICT
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| SC22201 SC22201CN SC22101CN SC22201CM SC22101 |
Electrically Erasable Programmable Memories
|
List of Unclassifed Manufacturers
Sierra
ETC[ETC]
|
| TC544000 |
CMOS UV Erasable and Electrically Programmable ROM
|
Toshiba
|
| 22CV10AZ-25 PEEL22CV10AZT-25 PEEL22CV10AZP-25 PEEL |
CMOS Programmable Electrically Erasable Logic Device
|
List of Unclassifed Manufacturers
ETC
|
| PEEL153 |
CMOS Programmable Electrically Erasable Logic Device
|
AMI Semiconductor
|
| AT93C56B-MEHM-T AT93C66B-MEHM-T AT93C56B-CUM-T AT9 |
Three-wire Serial Electrically Erasable Programmable Read-only Memory
|
ATMEL Corporation
|
| AT24C02C |
Two-wire Serial Electrically Erasable and Programmable Read-only Memory
|
ATMEL
|
