| PART |
Description |
Maker |
| HY27UF084G2M |
4Gbit (512K x 8-Bit) NAND Flash
|
Hynix Semiconductor
|
| KM29V040T |
512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM29N040T |
512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM（为512k字16 100万字× 8位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119
512K X 18 CACHE SRAM, 2.6 ns, PBGA119
256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC
Motorola, Inc
|
| MX26LV040PC-55 MX26LV040QC-55 MX26LV040TC-55G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PQCC32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
