| PART |
Description |
Maker |
| FQAF16N25C |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR224B IRFU224B IRFR224BTMFP001 IRFR224BTMNL |
250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A
250V N-Channel MOSFET
|
Fairchild Semiconductor
International Rectifier
|
| IRF614B IRF614BFP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF634B IRFS634B IRF634BFP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A
250V N-Channel MOSFET
|
Samsung semiconductor
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW624B IRFI624B IRFW624BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW624A
250V N-Channel MOSFET 4.1 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQPF8N60CT |
600V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail
|
FAIRCHILD SEMICONDUCTOR CORP
|
| SFW9614TM |
250V P-Channel A-FET
|
Fairchild Semiconductor
|
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQI6N40C FQB6N40C FQB6N40CTM FQI6N40CTU |
400V N-Channel MOSFET
400V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF6N80C FQP6N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB9N50C FQI9N50C FQB9N50CTM FQI9N50CTU |
500V N-Channel Advance Q-FET C-Series
500V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
