| PART |
Description |
Maker |
| E011402 ECR20-R051FB ECR20-R051FE ECR20-R051FV ECR |
Flat Type Extremely-Low Resistance Chip Resistor
|
HOKURIKU ELECTRIC INDUSTRY CO.,LTD
HOKURIKU ELECTRIC INDUS...
|
| PMF370XN |
N-channel mTrenchMOS extremely low level FET
N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| L1SS400CST5G |
High speed switching Extremely small surface mounting type.
|
Leshan Radio Company
|
| DTP9531 DTP953113 |
P-Channel 30 V (D-S) MOSFET Extremely low RDS(on)
|
DinTek Semiconductor Co,.Ltd
|
| PLO5R020F PLO5R020G PLO5R020H PLO5R020J PLO5R020K |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| LPW-351202F LPW-351202J LPW-351202K LPW-1051202F L |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| AP2121AK3.2TRE1 AP2121AN3.2TRE1 AP2121AK1.5TRE1 AP |
150mA EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| GFC048 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| PMN50XP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
