PART |
Description |
Maker |
GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output 35ns; 64K x 16 CMOS dynamic RAM with extended data output 40ns; 64K x 16 CMOS dynamic RAM with extended data output 45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode 50ns 1M x 16bit CMOS dynamic ram with EDO page mode 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL- |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
|
Samsung Electronic
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns 2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns 2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
V53C16129H V53C16129HK60 |
High performance 128K x 16 EDO page mode CMOS dynamic RAM HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic Corp] Mosel Vitelic, Corp
|
GLT41116-30J4 GLT41116-45J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode 45ns; 64K x 16 CMOS dynamic RAM with fast page mode
|
G-LINK Technology
|
MB8116165B-50 MB8116165B-60 |
1 M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超级页面存取模式动态RAM) 1 M ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ?16浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
MB81116822A-84 MB81116822A-125 |
CMOS 2×1M ×8 BIT
Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns
|
Samsung Electronic
|
VG26S17400FJ-5 VG26S17400FJ-6 VG26V17400FJ-5 VG26V |
4,194,304 x 4 - Bit CMOS FPM Dynamic RAM 4,194,304 x 4 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|