| PART |
Description |
Maker |
| AGR21045EF |
45 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21090E AGR21090EF AGR21090EU |
90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| MRF19030SR3 MRF19030R3 |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF183 MRF183S MRF183D |
MRF183R1, MRF183SR1 1.0 GHz, 45 W, 28 V, Lateral N-Channel Broadband RF Power MOSFETs
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MRF18090B MRF18090BS |
MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
Freescale Semiconductor, Inc
Motorola, Inc
|
| MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| PE87FL1013 |
11 Section Bandpass Filter With SMA Female Connectors Operating From 2 GHz to 4 GHz With a 2 GHz Passband
|
Pasternack Enterprises,...
|
| MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
