| PART |
Description |
Maker |
| 2SC343707 2SC3437 |
Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SC5383 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
|
Isahaya Electronics Corporation
|
| 2SC5010 2SC5010-T1 2SC5010-T1-T2 |
NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
128 x 128 pixel format, LED or EL Backlight available
|
NEC Corp.
|
| KTX401E |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) 平面PNP晶体管外延硅外延平面型二极管（通用，超高速开关）
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| HN1D01FE |
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN1D02FE |
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN1D01FU07 HN1D01FU |
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| 1SS308 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
|
TOSHIBA
|
| HN1D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
