| PART |
Description |
Maker |
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| MJE702 MJE700 MJE701 MJE703 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| MJE803 MJE801 MJE802 MJE800 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP127 TIP125 TIP126 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
TAI-SAW TECHNOLOGY CO.,...
|
| BC847BLD-7 BC847BLD1 |
SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE
|
Diodes Incorporated
|
| BSS63R |
SOT23 PNP silicon planar Emitter-base voltage VEBO -6 V
|
TY Semiconductor Co., Ltd
|
| BC847BLD-7 BC847BLD |
SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE
|
Diodes Inc.
DIODES[Diodes Incorporated]
|
| MJ10007-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| TIP111 TIP110 TIP112 TIP112TU |
NPN Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP147T TIP145T TIP146T TIP147TTU |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
