| PART |
Description |
Maker |
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MHV5IC2215NR2 |
RF LDMOS Wideband Integrated Power Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MHV5IC1810NR2 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MW7IC915NT1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| PTMA210152M |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 ?2200 MHz
|
Cree, Inc
|
| PTMA080152M10 |
Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz
|
Infineon Technologies AG
|
| PTMA180402M |
Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 ?2100 MHz
|
Cree, Inc
|
| PTMA080152 PTMA080152M |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 ?1000 MHz
|
Cree, Inc
|
