| PART |
Description |
Maker |
| P80C32X2 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage (2.7 to 5.5 V), low power, high speed (30/33 MHz)
|
Philips
|
| 80C38X2 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V low power high speed 30/33 MHz
|
Philips
|
| IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM)
32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| AT28HC256-12DM_883 AT28HC256-12FM_883 AT28HC256-12 |
From old datasheet system
256 (32K x 8) High Speed CMOS
256 32K X 8 HIGH SPEED PARALLEL EEPROMS
256 32K x 8 High Speed CMOS E2PROM
|
ATMEL[ATMEL Corporation]
|
| ST7263BE2M1 ST7263BE2M1XXX ST72F63BK4M1 ST7263BE6M |
Low speed USB 8-bit MCU family with up to 32K Flash/ROM, DFU capability, 8-bit ADC, WDG, timer, SCI & I漏梅C
Low speed USB 8-bit MCU family with up to 32K Flash/ROM, DFU capability, 8-bit ADC, WDG, timer, SCI & I虏C
Low speed USB 8-bit MCU family with up to 32K Flash/ROM, DFU capability, 8-bit ADC, WDG, timer, SCI & I2C
|
STMicroelectronics
http://
|
| C9860-44 C9872-22 C9860-42 |
ST7265X - LOW-POWER, FULL-SPEED USB 8-BIT MCU WITH 32K FLASH, 5K RAM, FLASH CARD I/F, TIMER, PWM, ADC, I2C, SPI
SYSTEM VOLTAGE REGULATOR WITH FAULT TOLERANT LOW SPEED CAN-TRANSCEIVER 光电
|
ON Semiconductor
|
| KM68V257E |
32K X 8 Bit High Speed CMOS Static RAM
|
Samsung Semiconductor
|
| ST72F63BD6U1 ST72F63BE1M1 ST72F63BE2M1 ST72F63BE4M |
Low speed USB 8-bit MCU family with up to 32K Flash/ROM, DFU capability, 8-bit ADC, WDG, timer, SCI & I?C
|
STMicroelectronics
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| 6SVP470M IS61C3216-10K IS61C3216-10T IS61C3216-12K |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 10 ns, PDSO44
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 12 ns, PDSO44
Frequency characteristics
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Sanyo Semicon Device
Integrated Silicon Solution Inc
|
| IDT70V658S15DR IDT70V657S10DRI IDT70V657S15DRI IDT |
Dual N-Channel Digital FET
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 高.3 128/64/32K × 36 ASYNCHRONO美国双端口静态RAM
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
|
Integrated Device Technology, Inc.
|
