| PART |
Description |
Maker |
| IRFR13N15D IRFU13N15D |
(IRFR13N15D / IRFU13N15D) Power MOSFET
Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A) 功率MOSFET（减振钢板基本\u003d 150伏时RDS（on）的最大值\u003d 0.18ohm，身份证\u003d 14A条）
HEXFET? Power MOSFET
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
| PE2235-30 |
HIGH POWE R DIRECTIONAL COUPLER FREQUENCY RANGE: 4-12 GHz
|
Pasternack Enterprises, Inc.
|
| B25671A5287A37509 B25671A5287A375 |
Film Capacitors - Powe Factor Correction PoleCap capacitor
|
EPCOS
|
| GL194A |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| BD7542SFVM BD7541SG BD7541SG-TR BD7541G BD7541G-TR |
Low Powe Input-Output Full Swing Operational Amplifier
|
ROHM
|
| BCM8220 |
2.488/ 2.667 GBPS ULTRA LOW POWE SONET/SDH TRANSCEIVER
|
BOARDCOM[Broadcom Corporation.]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| BCM8220 BCM8220_04 BCM822004 |
2.488/2.667-Gbps SONET/SDH Transceiver
2.488/ 2.667 GBPS ULTRA LOW POWE SONET/SDH TRANSCEIVER
2.488/2.667 GBPS ULTRA LOW POWER SONET/SDH TRANSCEIVER
|
ETC
BOARDCOM[Broadcom Corporation.]
|
