| PART |
Description |
Maker |
| HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MSM534031E |
Replaced by OPA2694 : Dual Wideband, Low Power, Current Feedback Operational Amplifier 8-SOIC
524,288-Word x 8-Bit MASKROM
From old datasheet system
524288-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| MR27V1652D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| MR27V3252D |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| M5M5408BTP M5M5408BRT M5M5408BFP M5M5408BFP-55LI |
524288-word by 8-bit CMOS static RAM, 55ns
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM
262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
| MSM27C1655CZ |
524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM 524,288 -双字× 32位或1048576字16 -双字× 32位或8字16位页面模式一次性可编程
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| TC514260BFT TC514260BJ |
262144 WORD X 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| GM71C4256B |
262144 word x 4 Bit CMOS DRAM
|
LG
|
| M66287FP |
262144-word x 8-bit x 3-FIELD MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
