| PART |
Description |
Maker |
| BS616LV1016 |
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconductor
|
| BS616LV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
| BS616LV4010 |
Asynchronous 4M(256Kx16) bits Static RAM
From old datasheet system
|
BSI
|
| BS62LV2565 |
Asynchronous 256K(32Kx8) bits Static RAM
From old datasheet system
|
BSI
|
| BS616LV2025 |
Asynchronous 2M(256Kx8 or 128Kx16 Switchable) bits Static RAM
From old datasheet system
|
BSI
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| BS62LV2008 BS62LV2016SI BS62LV2008DC BS62LV2008DC- |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
From old datasheet system
Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IDT72T51333 IDT72T51353 IDT72T51343 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
Integrated Device Technology, Inc.
|
| BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
From old datasheet system
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IS42S32200C1-6BL IS42S32200C1-6T IS42S32200C1-6TI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16400C1-7T IS42S16400C1-7TI IS42S16400C1-7TLI |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS42S32200L |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
List of Unclassifed Man...
|
