| PART |
Description |
Maker |
| SD5400 SD5001 SD5401 SD5401CY SD5000 SD5000I SD500 |
QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
|
LINEAR[Linear Integrated Systems]
|
| SST214 SD214DE SST211 SST215 SST213 SST210 SD215 S |
HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS
N-CHANNEL LATERAL DMOS SWITCH
|
Linear Integrated Syste...
LINEAR[Linear Integrated Systems]
http://
|
| SD211T SST215 SD211 SD213 SD215 SST211 SST213 |
N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS
|
LINEAR[Linear Integrated Systems]
|
| UPF1060 |
Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
|
CREE
|
| SST824 SST823 |
HIGH SPEED N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
|
LINEAR[Linear Integrated Systems]
|
| VP0206N6 VP0206N7 VP0204N6 VP0204N7 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
|
Supertex Inc
SUTEX[Supertex, Inc]
|
| VN0106NE VN0109NE |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
|
Supertex Inc
SUTEX[Supertex, Inc]
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| SD5001 SD5401 SD5402 SD5402CY SD5400CY SD5000N XSD |
30.5mm Hole Pushbutton Enclosure; NEMA Type:12, 13; Enclosure Material:Steel; Enclosure Color:Gray; No. of Contacts:5 RoHS Compliant: Yes 50 mA, 15 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
High-Speed DMOS Quad FET Analog Switch Arrays 50 mA, 20 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Magnet-Schultz of America, Inc.
Calogic LLC
CALOGIC[Calogic, LLC]
|
| VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω，N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS（击穿电40伏，10Ω沟道增强型垂直的DMOS结构场效应管
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??)
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
|
Elan Microelectronics, Corp.
ELAN Microelctronics Corp .
|
